Manufacturing method for n-type porous silicon based on Hall effect without illumination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2354451
Reference20 articles.
1. Chemiluminescence of Anodized and Etched Silicon: Evidence for a Luminescent Siloxene-Like Layer on Porous Silicon
2. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
3. Luminescence and current-voltage characteristics of solar cells and optoelectronic devices
4. Realization of porous silicon membranes for gas sensor applications
5. Fabrication of MSM photoconductor on porous Si using micromachined silicon mask
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2. Improvement of a capacitive UV-sensor by porous silicon powders embedded in epoxy on porous silicon film;Optical Materials Express;2022-07-20
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