Spontaneous emission mechanisms of GaInAsN∕GaAs quantum dot systems
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2401051
Reference26 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. GaInNAs: a novel material for long-wavelength semiconductor lasers
3. GaInNAs long-wavelength lasers: progress and challenges
4. Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
5. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode
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2. Tuning spontaneous emission in BInGaAs/GaAs QWs by varying the growth temperature: above 1.2 µm emission and solar cells application;Optical and Quantum Electronics;2021-08-17
3. Optical characterization of Nitrided InAs/GaAs quantum dots grown by MBE;Journal of Materials Science: Materials in Electronics;2021-08-11
4. Growth temperature impact on MOVPE-grown BInGaAs/GaAs QWs designed for optoelectronic applications;Journal of Materials Science: Materials in Electronics;2021-07-18
5. Nitrogen induced localised-state ensemble effect on multi quantum well GaInNAs with low indium concentration;Journal of Physics D: Applied Physics;2021-03-30
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