n‐channel insulated‐gate field‐effect transistors in Hg1−xCdxTe withx=0.215
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91509
Reference5 articles.
1. Field‐Effect Measurements on the HgCdTe Surface
2. The interface between Hg1−xCdxTe and its native oxide
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4. Electrical properties of ion‐implanted layers in Hg0.79Cd0.21Te
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2. Enhancement of the second harmonic signal from Hg1−xCdxTe (MCT) in the presence of an anodic oxide film;Journal of Electroanalytical Chemistry;2010-07
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