Temperature dependence of ohmic shunt resistance in mercury cadmium telluride junction diode
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Photovoltaic detectors;Rogalski,1995
2. An analysis of the dynamic resistance variation as a function of reverse bias voltage in a HgCdTe diode
3. Analysis of dark current contributions in mercury cadmium telluride junction diodes
4. Modeling of dark characteristics of mercury cadmium telluride n+–p junctions
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