Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition-Reference-Cited by-同舟云学术

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Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Published:2015-03-02 Issue:9 Volume:106 Page:091103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gallagher J. D.¹,Senaratne C. L.²,Sims P.²,Aoki T.³,Menéndez J.¹^ORCID,Kouvetakis J.²

Affiliation:

1. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA

2. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA

3. LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287- 1704, USA

Funder

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913688

Reference18 articles.

1. Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys

2. Compositional dependence of the direct and indirect band gaps in Ge1−ySnyalloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic andn-type materials

3. Electronic properties of metastableGexSn1−xalloys

4. Band structure and instability of Ge1−xSnx alloys

5. Lasing in direct-bandgap GeSn alloy grown on Si

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1. Optical and electronic properties of Ge1−xSnx/Si alloys grown by remote plasma-enhanced chemical vapor deposition;Journal of Vacuum Science & Technology B;2024-08-30

2. Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates;Journal of Vacuum Science & Technology B;2024-08-20

3. High-quality Ge1−xSnx (x = 0–0.11) realized by UHV-CVD using Ge2H6 and SnCl4: Materials growth, structural/optical properties, and prototype IR photodetectors;APL Materials;2024-07-01

4. X-ray photoelectron spectroscopy surface oxidation study of remote plasma-enhanced chemical vapor deposition-grown Ge1−xSnx/Si alloys;Journal of Vacuum Science & Technology B;2024-07-01

5. Research progress of out-of-plane GeSn nanowires;Nanotechnology;2024-03-26

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