Defect creation by 10‐keV electron irradiation in phosphorous‐dopeda‐Si:H
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345446
Reference26 articles.
1. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
2. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
3. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
4. Investigation of the localised state distribution in amorphous Si films
5. Investigation of the density of localized states in a-Si using the field effect technique
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metastability in P- and N-type a-Si:H investigated by keV-electron irradiation;Solid State Communications;1993-03
2. Tail states in hydrogenated amorphous silicon studied by thermoluminescence;Solid State Communications;1991-11
3. Dependence of effective doping on structural order in hydrogenated amorphous silicon;Solid State Communications;1991-01
4. Effect of local structural order on the doping in hydrogenated amorphous silicon (a - Si : H);Journal of Non-Crystalline Solids;1991-01
5. Modifications in Gap State Distribution Upon High Energy Electron Bombardment in n Type Hydrogenated Amorphous Silicon;MRS Proceedings;1990
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