Dependence of effective doping on structural order in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Dependence of effective doping on structural order in hydrogenated amorphous silicon

Published:1991-01 Issue:3 Volume:77 Page:195-197
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Dusane R.O.,Babras Suvarna,Jadkar S.R.,Bhide V.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference20 articles.

1. Substitutional doping of amorphous silicon

2. Hydrogenated Amorphous Silicon;Lucovsky,1984

3. Structural order and dynamics of amorphous Si and Ge

4. Intermediate range order in elemental amorphous and liquid semiconductors

5. Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of transport properties in tunnel junction on boron doping;physica status solidi (c);2010-02-23

2. Tail states in hydrogenated amorphous silicon studied by thermoluminescence;Solid State Communications;1991-11

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