DEEP (1–10 μ) PENETRATION OF ION‐IMPLANTED DONORS IN SILICON
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1754710
Reference3 articles.
1. Penetration of Heavy Ions of keV Energies into Monocrystalline Tungsten
2. RANGE OF ENERGETIC Xe125 IONS IN MONOCRYSTALLINE SILICON
3. Impurity Distribution in Epitaxial Silicon Films
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1. Early ion implantation history (or “how I met Jim Mayer—and Högsted Phim!”);Materials Chemistry and Physics;1996-11
2. Reflections and reminiscences from the early history of RBS, NRA and channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-02
3. Equivalent diffusion effect due to the dielectric relaxation effect;Journal of Applied Physics;1973-08
4. Ion implantation doping of compound semiconductors;Physica Status Solidi (a);1973-03-16
5. Electrical properties of silicon implanted with boron ions of MeV energy;Radiation Effects;1973-01
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