Electrical properties of silicon implanted with boron ions of MeV energy-Reference-Cited by-同舟云学术

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Electrical properties of silicon implanted with boron ions of MeV energy

Published:1973-01 Issue:2 Volume:19 Page:77-82
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Kostka A.,Kalbitzer S.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577308232222

Reference28 articles.

1. The fabrication of high quality silicon junction detectors by low energy ion implantation

2. 1967. Int. Conf. on Applications of Ion Beams to Semiconductor Téchnology. 1967, Grenoble.

3. 1970. I. Int. Conf. on Ion Implantation in Semiconductors. 1970, Thousand Oaks.

4. 1970. European Conf. on'Ion Implantation. 1970, Reading.

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01

2. Pre-amorphization damage in ion-implanted silicon;Materials Science Reports;1991-08

3. The annealing of MeV energy boron ions implanted into silicon;Vacuum;1989-01

4. A multisegment annular Si-detector system for RBS analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-12

5. Characteristics of CMOS devices in high-energy boron-implanted substrates;IEEE Transactions on Electron Devices;1988-07

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