Doping effect on the dielectric property in bismuth titanate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1649456
Reference17 articles.
1. Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model
2. Correlation between internal stress and ferroelectric fatigue in Bi4−xLaxTi3O12 thin films
3. Lanthanum-substituted bismuth titanate for use in non-volatile memories
4. X-ray photoelectron spectroscopy and high resolution electron microscopy studies of Aurivillius compounds: Bi4−xLaxTi3O12(x=0, 0.5, 0.75, 1.0, 1.5, and 2.0)
5. X-ray photoelectron spectroscopy and high resolution electron microscopy studies of Aurivillius compounds: Bi4−xLaxTi3O12(x=0, 0.5, 0.75, 1.0, 1.5, and 2.0)
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