Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953057
Reference24 articles.
1. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications
2. Ge/Si quantum dots thin film solar cells
3. Designer Ge/Si composite quantum dots with enhanced thermoelectric properties
4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
5. Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique;Scientific Reports;2023-05-09
2. Effect of growth temperature of Si buffer layer on the morphology of Ge quantum dots on Si;International Conference on Optoelectronic Materials and Devices (ICOMD 2022);2023-03-09
3. Quantum Dots Synthesis Through Direct Laser Patterning: A Review;Frontiers in Chemistry;2019-04-17
4. Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing;Japanese Journal of Applied Physics;2018-03-20
5. Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing;Nanotechnology;2018-01-24
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