Effect of growth temperature of Si buffer layer on the morphology of Ge quantum dots on Si

Author:

Shu Qijiang,Chen Lei,Yang Linjing

Publisher

SPIE

Reference13 articles.

1. Hybrid superconductor–semiconductor devices made from self-assembled SiGe nanocrystals on silicon

2. Germanium quantum dot infrared photodetectors addressed by self-aligned silicon nanowire electrodes

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4. Orientational competition in quantum dot growth in Si-Ge heteroepitaxy on pit-patterned Si(001) substrates;Dixit;Phys. Chem. Chem. Phys.,2020

5. Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing;Itoh;Thin Solid Films,2015

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