Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3256225
Reference32 articles.
1. Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress
2. Reliability characteristics of high-k dielectrics
3. High-κ gate dielectrics: Current status and materials properties considerations
4. Percolation models for gate oxide breakdown
5. Mechanics-based statistics of failure risk of quasibrittle structures and size effect on safety factors
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