Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization-Reference-Cited by-同舟云学术

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

Published:2018-06 Issue:6 Volume:8 Page:065015
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Mottram Alexander D.¹²,Pattanasattayavong Pichaya¹^ORCID,Isakov Ivan²^ORCID,Wyatt-Moon Gwen²^ORCID,Faber Hendrik²³^ORCID,Lin Yen-Hung²⁴^ORCID,Anthopoulos Thomas D.²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong 21210, Thailand

2. Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW, United Kingdom

3. King Abdullah University of Science and Technology, Division of Physical Sciences and Engineering, Thuwal 23955-6900, Saudi Arabia

4. Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, United Kingdom

Funder

VISTEC

King Abdullah University of Science and Technology

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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