An approach using a subamorphizing threshold dose silicon implant of optimal energy to achieve shallower junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367897
Reference2 articles.
1. Eliminating channeling tail by lower dose preimplantation
2. Defect distribution in ion-implanted silicon. A Monte Carlo simulation
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