An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon

Abstract

AbstractWe report that arsenic diffusion can be enhanced and retarded by surrounding interstitial rich and vacancy rich environments created by Si point defect engineering implant. The enhancement and retardation can be attributed to the dominant arsenic interstitial diffusion mechanism during post-implant anneal. Kinetic Monte Carlo simulations with newly implemented models show good match with experiments. Our study suggests the importance of arsenic interstitial mechanism and a possible approach for n-type ultra shallow junction fabrication.