Photoquenching phenomenon enhanced by proton irradiation in semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346855
Reference8 articles.
1. γ‐ray enhanced quenching phenomenon of photoconductance in undoped and In‐doped semi‐insulating GaAs
2. Isolated arsenic-antisite defect in GaAs and the properties ofEL2
3. Influence of photoexcitation on hopping conduction in neutron‐transmutation‐doped GaAs
4. Photoelectric memory effect in GaAs
5. Spectral distributions of photoquenching rate and multimetastable states for midgap electron traps (EL2 family) in GaAs
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1. Defect engineering in GaAs using high energy light ion irradiation: Role of electronic energy loss;Journal of Applied Physics;2011-02
2. Modification of charge compensation in semi-insulating semiconductors by high energy light ion irradiation;Journal of Applied Physics;2008-03
3. Metastable defects in SI-GaAs: Effect of high energy ion-irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12
4. Defect Generation by Proton Irradiation of Semi-Insulating Lec GaAs;MRS Proceedings;1998
5. Photon radiation damage in high purity silicon and lec si gallium arsenide detectors;Nuclear Physics B - Proceedings Supplements;1995-11
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