Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon-Reference-Cited by-同舟云学术

Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon

Published:2021-11-08 Issue:19 Volume:119 Page:193102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

del Giudice Fabio¹,Fust Sergej¹,Schmiedeke Paul¹,Pantle Johannes¹,Döblinger Markus²,Ajay Akhil¹^ORCID,Meder Steffen¹,Riedl Hubert¹,Finley Jonathan J.¹^ORCID,Koblmüller Gregor¹^ORCID

Affiliation:

1. Walter Schottky Institute and Physics Department, Technical University of Munich, Garching 85748, Germany

2. Department of Chemistry, Ludwig-Maximilians-University Munich, Munich 81377, Germany

Funder

Deutsche Forschungsgemeinschaft

H2020 European Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0065867

Reference49 articles.

1. Vertical high-mobility wrap-gated InAs nanowire transistor

2. High Electron Mobility InAs Nanowire Field-Effect Transistors

3. One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

4. Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires

5. Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

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