Quantum-size effects in hafnium-oxide resistive switching-Reference-Cited by-同舟云学术

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Quantum-size effects in hafnium-oxide resistive switching

Published:2013-05-06 Issue:18 Volume:102 Page:183505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Long Shibing,Lian Xiaojuan,Cagli Carlo,Cartoixà Xavier,Rurali Riccardo,Miranda Enrique,Jiménez David,Perniola Luca,Liu Ming,Suñé Jordi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4802265

Reference23 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Memory materials: a unifying description

3. Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

4. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

5. Electrochemical metallization memories—fundamentals, applications, prospects

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3. Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices;Scientific Reports;2024-01-11

4. Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard;Advanced Quantum Technologies;2023-05-18

5. AgBiS₂ quantum dot based multilevel resistive switching for low power electronics;Journal of Materials Chemistry C;2023

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