Simulating the horizontal growth process of silicon ribbon-Reference-Cited by-同舟云学术

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Simulating the horizontal growth process of silicon ribbon

Published:2018-08 Issue:8 Volume:8 Page:085307
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Sun Tao¹²,Ding Jianning¹²,Jiang Cunhua²,Xu Jiawei²,Yuan Ningyi²

Affiliation:

1. Micro /Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China

2. Collaborative Innovation Center of Photovoltaic Science and Engineering, the breeding construction point of State Key Laboratory of Photovoltaic Engineering Science, Changzhou University, Changzhou 213164, Jiangsu Province, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4996832

Reference17 articles.

1. Crystalline silicon photovoltaics: a cost analysis framework for determining technology pathways to reach baseload electricity costs

2. A new method for growing crystal ribbons

3. Improvements in the Horizontal Ribbon Growth technique for single crystal silicon

4. Theoretical analysis of heat flow in horizontal ribbon growth from a melt

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gas effects on horizontal ribbon growth;Journal of Crystal Growth;2024-05

2. Buoyancy and Marangoni effects on horizontal ribbon growth;Journal of Crystal Growth;2022-10

3. Diffusion coefficients of carbon, oxygen and nitrogen in silicon melt;Journal of Crystal Growth;2022-02

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