The influence of oxygen on the analysis of a Pt/Si structure with secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352760
Reference14 articles.
1. Oxygen-induced segregation effects in sputter depth-profiling
2. Implantation and ion beam mixing in thin film analysis
3. Quantitative analysis of buried interfacial impurity layers by SIMS and RBS
4. Comparison of profile tailing in SIMS analyses of various impurities in silicon using nitrogen, oxygen, and neon ion beams at near-normal incidence
5. Field‐induced segregation effects during secondary‐ion mass spectrometry depth profiling of Cu and Na implanted in silicon
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