Low-frequency charge trapping and bistable domain switching in Mg-doped LiNbO3 single crystal films
Author:
Affiliation:
1. State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
Funder
Basic Research Project of Shanghai Science and Technology Innovation Action
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5050490
Reference19 articles.
1. Comparison of electro-optic effect between stoichiometric and congruent LiNbO3
2. Domain-wall conduction in AFM-written domain patterns in ion-sliced LiNbO3 films
3. Lithium niobate on insulator (LNOI) for micro-photonic devices
4. Tbit/inch2 ferroelectric data storage based on scanning nonlinear dielectric microscopy
5. Fabrication of single-crystal lithium niobate films by crystal ion slicing
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1. Diode-Like Behavior Based on Conductive Domain Wall in LiNbO Ferroelectric Single-Crystal Thin Film;IEEE Electron Device Letters;2023-01
2. Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities;Ceramics International;2021-08
3. Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers;Nature Materials;2020-06-15
4. Effect of doping Mg on the structure and optical properties of LiNbO3 films prepared by radio-frequency magnetron sputtering;Materials Science in Semiconductor Processing;2020-03
5. Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer;Nanoscale Research Letters;2019-04-16
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