Remarkable p-type activation of heavily doped diamond accomplished by boron ion implantation at room temperature and subsequent annealing at relatively low temperatures of 1150 and 1300 °C
Author:
Affiliation:
1. Department of Mathematics and Physics, Kanagawa University, 2946, Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
Funder
Research Institute for Integrated Science, Kanagawa University
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5111882
Reference33 articles.
1. Electronic properties of CVD diamond
2. The boron acceptor in diamond
3. Diamond: Electronic Properties and Applications
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