Disorder‐induced band‐tailing effects on deep levels in semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349557
Reference11 articles.
1. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
2. Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices
3. Direct Evidence for Random-Alloy Splitting of Cu Levels inGaAs1−xPx
4. Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys
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