In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory-Reference-Cited by-同舟云学术

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In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

Published:2013-02-04 Issue:5 Volume:102 Page:053502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Jun,Liu Qi,Xie Hongwei,Wu Xing,Xu Feng,Xu Tao,Long Shibing,Lv Hangbing,Li Yingtao,Sun Litao,Liu Ming

Funder

Korean Ministry of Science and Technology

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4790837

Reference24 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

3. Nanometer-scale switches using copper sulfide

4. Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

5. Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte films

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4. Enhanced resistive switching performance of spinel MnCo2O4 resistive random access memory devices: Effects of annealing temperatures and annealing atmospheres;Current Applied Physics;2023-04

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