Author:
Hwang Sunyong,Jin Ha Woo,Kyu Kim Jong,Xu Jiuru,Cho Jaehee,Fred Schubert E.
Subject
Physics and Astronomy (miscellaneous)
Reference19 articles.
1. Activation energies of Si donors in GaN
2. V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev, and A. Zubrilov, in Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001), pp. 1–30.
3. Hole conductivity and compensation in epitaxial GaN:Mg layers
4. Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes
5. Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
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20 articles.
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