A study of germanium/SiO2MIS structures by the use of secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.322972
Reference22 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ge quantum dots in anomalous thick native germanium oxide layers;2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551);2004
2. Chapter 3 Silicon and Germanium Avalanche Photodiodes;Semiconductors and Semimetals;1985
3. On the Electric Subbands in n-Inversion Layers on (111) Ge;physica status solidi (b);1982-08-01
4. Depth profiling of oxygen in amorphous germanium films by secondary ion mass spectrometry;Thin Solid Films;1980-01
5. Structure of SiO2 pyrolitic films on Ge substrates;Physica Status Solidi (a);1977-10-16
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