Optical characterization of Al0.5Ga0.5As1−xSbxbuffer layers with modulation doped AlInAs/InGaAs structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363880
Reference9 articles.
1. High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs
2. Bandgap and lattice constant of GaInAsP as a function of alloy composition
3. Energy bandgap and lattice constant contours of iii–v quaternary alloys
4. Photoreflectance, absorption, and nuclear resonance reaction studies of AlxGa1−xAs grown by molecular‐beam epitaxy
5. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
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1. Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substrates;Journal of Crystal Growth;2006-01
2. AlGaAsSb/AlGaInAs type-II superlattices for tuning regions in tunable laser diodes;SPIE Proceedings;2004-09-01
3. Tunable filters using AlGaAsSb/AlGaInAs type-II quantum wells;SPIE Proceedings;2004-06-14
4. Band offsets of Al[sub x]Ga[sub 1−x]SbAs/InGaAs heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
5. MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor;Journal of Crystal Growth;2000-12
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