Modeling the optical constants of GaP, InP, and InAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369727
Reference26 articles.
1. Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation
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3. Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
4. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
5. Spectroscopic ellipsometry and thermoreflectance of GaAs
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1. Application of k $$\cdot $$ p method on band structure of GaAs obtained through joint density-functional theory;Bulletin of Materials Science;2020-08-20
2. Energy-dependent amplitude of Brillouin oscillations in GaP;Physical Review B;2019-04-11
3. First-principles calculations of opto-electronic properties of IIIAs (III = Al, Ga, In) under influence of spin–orbit interaction effects;Bulletin of Materials Science;2019-02
4. Ellipsometry of Semiconductor Nanocrystals;Ellipsometry at the Nanoscale;2013
5. Novel TMM for analyzing evanescent waves and optimized subwavelength imaging in a multilayer structure;Optik;2012-01
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