Electrically active defect centers induced by Ga+ focused ion beam irradiation of GaAs(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123150
Reference15 articles.
1. Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam Implantation
2. Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam Implantation
3. The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer
4. Formation of narrow channels using split back-gates defined byin situfocused ion beam lithography
5. Scanning tunneling microscopy of an ion‐bombarded PbS(001) surface
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1. On direct-writing methods for electrically contacting GaAs and Ge nanowire devices;Applied Physics Letters;2010-05-31
2. Quantitative off-axis electron holography of GaAsp-njunctions prepared by focused ion beam milling;Journal of Microscopy;2009-01
3. An investigation on the variations in properties of Ni+irradiated ZnO thin films;Radiation Effects and Defects in Solids;2008-07
4. Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography;Ultramicroscopy;2008-04
5. Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si p-n junctions by in situ annealing;Applied Physics Letters;2006-02-06
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