First-principles exploration of possible trap terminators in SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122103
Reference15 articles.
1. Electron trap center generation due to hole trapping in SiO2under Fowler–Nordheim tunneling stress
2. Hole trapping and breakdown in thin SiO2
3. RechargeableE’ centers in sputter‐deposited silicon dioxide films
4. Structure and Hyperfine Parameters ofE1′Centers inα-Quartz and in VitreousSiO2
5. Hole-Injection-Induced Structural Transformation of Oxygen Vacancy in α-Quartz
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3. On the Dependence of Band Alignment of SiO₂/Si Stack on SiO₂ Thickness: Extrinsic Or Intrinsic?;IEEE Access;2020
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