Validity of Matthiessen’s rule for calculating electron mobility in Ga1−xAlxAs alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335876
Reference15 articles.
1. Non-Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs Alloys
2. The conduction band structure and deep levels in Ga1-xAlxAs alloys from a high-pressure experiment
3. Scattering parameters from an analysis of the hall electron mobility in Ga1−xAlxAs alloys
4. Electron mobility in the X conduction band minima of Ga1−xAlxAs alloys
5. Hall to drift mobility ratio in Ga1−xAlxAs alloys
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