Origin of saturated light‐induced defect density in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354791
Reference25 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Light‐induced dangling bonds in hydrogenated amorphous silicon
3. Origin of the photo-induced changes in hydrogenated amorphous silicon
4. Charge-trapping model of metastability in doped hydrogenated amorphous silicon
5. Saturation of the light‐induced defect density in hydrogenated amorphous silicon
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