Effect of chemical doping on memristive behavior of VO2 microcrystals
Author:
Affiliation:
1. Nanoscale Materials and Devices Laboratory, School of Engineering, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh 175075, India
Funder
Scheme for Transformational and Advanced Research in Sciences
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0075566
Reference29 articles.
1. Resistive switching studies in VO2 thin films
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5. Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices
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