To probe the performance of perovskite memory devices: defects property and hysteresis-Reference-Cited by-同舟云学术

To probe the performance of perovskite memory devices: defects property and hysteresis

Published:2017 Issue:23 Volume:5 Page:5810-5817
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xu Ziqi¹²³⁴⁵^ORCID,Liu Zonghao⁶²³⁴⁵,Huang Yuan¹²³⁴⁵,Zheng Guanhaojie⁶²³⁴⁵,Chen Qi⁷⁸⁴⁵,Zhou Huanping¹²³⁴⁵^ORCID

Affiliation:

1. Department of Energy and Resources Engineering

2. College of Engineering

3. Peking University

4. Beijing 100871

5. China

6. Department of Materials Science and Engineering

7. School of Materials Science and Engineering

8. Beijing Institute of Technology

Abstract

A hybrid perovskite memory device with a decent set voltage has been successfully demonstrated, and the performance was correlated to the defect density and hysteresis-index of different perovskite films.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00266A

Reference32 articles.

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4. Solvent Annealing of Perovskite-Induced Crystal Growth for Photovoltaic-Device Efficiency Enhancement

5. Giant switchable photovoltaic effect in organometal trihalide perovskite devices

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