The effect of polarity on MOCVD growth of thick InGaN
Author:
Affiliation:
1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4972967
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1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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5. Spontaneous polarization and piezoelectric constants of III-V nitrides
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