Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects-Reference-Cited by-同舟云学术

Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects

Published:2016-12-28 Issue:24 Volume:120 Page:245705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chowdhury A. R.¹^ORCID,Dickens J. C.¹,Neuber A. A.¹^ORCID,Joshi R. P.¹

Affiliation:

1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4972968

Reference42 articles.

1. Picosecond optoelectronic switching and gating in silicon

2. The Dielectric Wall Accelerator

3. All solid-state high power microwave source with high repetition frequency

4. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

5. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics-Based Artificial Neural Network Assisting in Extracting Transient Properties of Extrinsically Triggering Photoconductive Semiconductor Switches;Micromachines;2024-08-01

2. Anisotropic hole drift velocity in 4H-SiC;Materials Science and Engineering: B;2019-10

3. Performance of a Vertical 4H-SiC Photoconductive Switch With AZO Transparent Conductive Window and Silver Mirror Reflector;IEEE Transactions on Electron Devices;2018-05

4. Erratum: “Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects” [J. Appl. Phys. 120, 245705 (2016)];Journal of Applied Physics;2018-02-28