THE EFFECT OF TRAPPING STATES ON TUNNELING IN METAL‐SEMICONDUCTOR JUNCTIONS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652641
Reference9 articles.
1. Field and thermionic-field emission in Schottky barriers
2. Tunneling Spectroscopy in GaAs
3. Experimental Energy-Momentum Relationship Determination Using Schottky Barriers
4. Energy-Momentum Relationship in InAs
5. Volt-current characteristics for tunneling through insulating films
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