Simultaneous measurement of electron and hole escape times from biased single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107903
Reference10 articles.
1. Non-linear population processes of Er3+ laser levels in chromium-doped garnet crystals
2. Fast escape of photocreated carriers out of shallow quantum wells
3. Exciton saturation in electrically biased quantum wells
4. Self‐electro‐optic effect device and modulation convertor with InGaAs/InP multiple quantum wells
5. Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation
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2. Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells;Optics Express;2010-11-22
3. Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells;Japanese Journal of Applied Physics;2000-04-30
4. A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure;Applied Physics Letters;2000-01-24
5. Comparison of optical properties in GaN and InGaN quantum well structures;SPIE Proceedings;1999-11-12
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