Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study
Author:
Affiliation:
1. Swansea University, Swansea, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4998681
Reference31 articles.
1. Silicon Nanowire Transistors with a Channel Width of 4 nm Fabricated by Atomic Force Microscope Nanolithography
2. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
3. Electrostatics of nanowire transistors with triangular cross sections
4. Investigation of nanowire size dependency on TSNWFET
5. Silicon Device Scaling to the Sub-10-nm Regime
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