Reassessment of space‐charge and central‐cell scattering contributions to GaAs electron mobility
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329483
Reference13 articles.
1. Electrical characterization of epitaxial layers
2. Electron mobility and free‐carrier absorption in GaAs: Determination of the compensation ratio
3. Band Structure and Transport Properties of Some 3–5 Compounds
4. Anomalous Mobility Effects in Some Semiconductors and Insulators
5. Hall Effect, Schottky Barrier Capacitance, and Photoluminescence Spectra Measurements for GaAs Epitaxial Layer and Their Correlation
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chapter 1 III-V Compounds;Semiconductors and Semimetals;1988
2. Reassessment of ionized impurity scattering and compensation in GaAs and InP including correlation scattering;Journal of Applied Physics;1987-09-15
3. Effect of baking on space-charge scattering in undoped n-type LPE GaAs;Materials Letters;1986-07
4. Random and correlated scattering from ionized impurities in gallium arsenide;Physica B+C;1986-05
5. Validity of Matthiessen’s rule for calculating electron mobility in Ga1−xAlxAs alloys;Journal of Applied Physics;1985-10
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