Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag14+ ions

Author:

Kumar Ashish,Kumar Tanuj,Hähnel A.,Kanjilal D.,Singh R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Influence of annealing treatment on performance of 4H–SiC SBD irradiated by heavy ions under room temperature and low temperature;Micro and Nanostructures;2024-10

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3. Ion-induced transformation of shallow defects into deep-level defects in GaN epilayers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-07

4. Disorder induced in GaN thin films by 200 MeV silver ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-06

5. Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-05

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