Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy-Reference-Cited by-同舟云学术

Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy

Published:1984-02 Issue:3 Volume:44 Page:325-327
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sanada T.,Yamakoshi S.,Wada O.,Fujii T.,Sakurai T.,Sasaki M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.94741

Reference9 articles.

1. Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver

2. Monolithic integration of a double heterostructure light‐emitting diode and a field‐effect transistor amplifier using molecular beam grown AlGaAs/GaAs

3. Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy

4. A monolithically integrated optical repeater

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