Monolithic integration of a double heterostructure light‐emitting diode and a field‐effect transistor amplifier using molecular beam grown AlGaAs/GaAs-Reference-Cited by-同舟云学术

Monolithic integration of a double heterostructure light‐emitting diode and a field‐effect transistor amplifier using molecular beam grown AlGaAs/GaAs

Published:1983-08-15 Issue:4 Volume:43 Page:345-347
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wada O.,Sanada T.,Hamaguchi H.,Fujii T.,Sakurai T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.94331

Reference5 articles.

1. Monolithic integration of an injection laser and a metal semiconductor field effect transistor

2. Monolithic integration of a GaAlAs injection laser with a Schottky‐gate field effect transistor

3. Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

4. Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy

5. Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optoelectronic Integreated Circuits for Photonic Systems;IETE Journal of Research;1992-03

2. Planar monolithic integration of LED and FET devices on a conductive substrate;IEEE Transactions on Electron Devices;1987-10

3. Recent progress in optoelectric integrated circuits (OEIC's);IEEE Journal of Quantum Electronics;1986-06

4. A New Fabrication Technique for Optoelectronic Integrated Circuits (OEIC's) — The Graded‐Step Process — Applied to the Fabrication of AlGaAs / GaAs PIN/FET and PIN/Amplifier Photoreceivers;Journal of The Electrochemical Society;1985-08-01

5. Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy;Applied Physics Letters;1984-02