Annealing condition optimization and electrical characterization of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748308
Reference12 articles.
1. Unified defect model and beyond
2. The effect of interface arsenic domains on the electrical properties of GaAs MOS structures
3. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
4. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment;Applied Surface Science;2019-11
2. Electromodulation spectroscopy of highly mismatched alloys;Journal of Applied Physics;2019-10-14
3. Advances in La-Based High-k Dielectrics for MOS Applications;Coatings;2019-03-27
4. GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer;IEEE Transactions on Electron Devices;2018-01
5. Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer;Chinese Physics Letters;2017-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3