Effect of uniaxial stress on the threshold displacement energy of silicon carbide
Author:
Affiliation:
1. AML, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5048951
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1. Phase Transitions in Solids Stimulated by Simultaneous Exposure to High Pressure and Relativistic Heavy Ions
2. Irradiation-induced stabilization of zircon (ZrSiO4) at high pressure
3. Nanoscale manipulation of the properties of solids at high pressure with relativistic heavy ions
4. Luminescence of irradiated β-SiC
5. Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
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