Temperature-dependent infrared dielectric functions and hybrid phonon-polaritons in wurtzite GaN: A spectroscopic ellipsometry and multiscale simulation study

Abstract

Polar wurtzite GaN can host surface phonon-polaritons (SPHPs) along its bulk surface and achieve sub-diffraction confinement with an ultralow optical loss and has emerged as a relevant technological material for infrared nanophotonics. Yet, few studies have reported on the temperature-dependent infrared dielectric functions, lattice vibration's influence on the hybrid phonon-polaritons, and the underlying physics that are largely unexplored. Herein, we perform the infrared spectroscopic ellipsometry (SE) measurements and multiscale simulations including first-principles and finite-difference time-domain (FDTD) to systematically study the infrared dielectric function at varying temperatures, phonon dynamics, and SPHPs in wurtzite GaN. SE experiments identify the reststrahlen band where the amplitude of ordinary dielectric function reduces significantly by a factor of 3.5 and the propagation length of SPHPs decreases by a factor of 4.18 as temperature increases from 250 to 800 K, suggesting the strong influence of lattice vibration on SPHPs. First-principles calculations confirm that the reststrahlen band for the ordinary dielectric function lies between the transverse and longitudinal E1 phonon modes, while that of extraordinary dielectric function lies between the transverse and longitudinal A1 phonon modes. FDTD simulations observe the localized surface phonon resonances in the nano-porous GaN thin films deposited on the sapphire substrate only for the transverse magnetic wave mode, which is consistent with the observation of extra dip in the measured pp-polarized reflection spectroscopy. This work provides a deep insight into lattice vibration influence on phonon dynamics and SPHPs in wurtzite GaN and helps engineer them in nanophotonic devices toward achieving better performance.