Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Funder
US Government
Basic Energy Sciences (BES)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4954649
Reference14 articles.
1. Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
2. W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency
3. “N” structure for type-II superlattice photodetectors
4. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
5. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
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1. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15
2. Mid-wavelength infrared unipolar nBp superlattice photodetector;Infrared Physics & Technology;2018-01
3. High quantum efficiency mid-wavelength infrared superlattice photodetector;Infrared Technology and Applications XLIII;2017-02-22
4. A recent review of mid-wavelength infrared type-II superlattices: carrier localization, device performance, and radiation tolerance;SPIE Proceedings;2017-01-27
5. Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers;Applied Physics Letters;2016-12-19
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