Many-particle transport in the channel of quantum wire double-gate field-effect transistors with charged atomistic impurities
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3455878
Reference48 articles.
1. Where Do the Dopants Go?
2. Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations
3. Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation
4. Impact of Single Charge Trapping in Nano-MOSFETs—Electrostatics Versus Transport Effects
5. Sensitivity of single- and double-gate MOS architectures to residual discrete dopant distribution in the channel
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