Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation-Reference-Cited by-同舟云学术

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Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

Published:2004-05 Issue:5 Volume:51 Page:749-756
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Dollfus P.,Bournel A.,Galdin S.,Barraud S.,Hesto P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/28966/01303834.pdf?arnumber=1303834

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4. 3-D Monte Carlo device simulator for variability modeling of p-MOSFETs;Journal of Computational Electronics;2020-02-17

5. Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devices;Materials;2018-12-16

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