Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

Author:

Dollfus P.,Bournel A.,Galdin S.,Barraud S.,Hesto P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 54 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation;Solid-State Electronics;2022-08

2. Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27

3. Quenching Statistics of Silicon Single Photon Avalanche Diodes;IEEE Journal of the Electron Devices Society;2021

4. 3-D Monte Carlo device simulator for variability modeling of p-MOSFETs;Journal of Computational Electronics;2020-02-17

5. Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devices;Materials;2018-12-16

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